Electron emission from conduction band of diamond with negative electron affinity
نویسندگان
چکیده
منابع مشابه
Secondary-electron emission from hydrogen- terminated diamond
Diamond amplifiers demonstrably are an electron source with the potential to support high-brightness, highaverage-current emission into a vacuum. We recently developed a reliable hydrogenation procedure for the diamond amplifier. The systematic study of hydrogenation resulted in the reproducible fabrication of high gain diamond amplifier. Furthermore, we measured the emission probability of dia...
متن کاملHigh-temperature electron emission from diamond films
This work examines electron field-emission characteristics of polycrystalline diamond films at elevated temperatures. Diamond is an excellent material as a field emitter because of its exceptional mechanical hardness and chemical inertness. The motivation behind this study involves the use of field emitters in applications where high temperatures exist. Nitrogen-doped polycrystalline diamond fi...
متن کاملImaging electron emission from diamond and III–V nitride surfaces with photo-electron emission microscopy
Ž . Wide bandgap semiconductors such as diamond and the III–V nitrides GaN, AlN, and AlGaN alloys exhibit small or even negative electron affinities. Results have shown that different surface treatments will modify the electron affinity of Ž . diamond to cause a positive or negative electron affinity NEA . This study describes the characterization of these surfaces Ž . with photo-electron emiss...
متن کاملElectron-trapping polycrystalline materials with negative electron affinity.
The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considerin...
متن کاملNegative electron affinity and electron emission at cesiated GaN and AlN surfaces
Ž . Ž . The electronic structure of GaN and AlN 0001 surfaces and modification by cesium Cs adsorption are investigated via Ž . Ž . ultra-violet and X-ray photoemission spectroscopy UPS, XPS and total yield spectroscopy. The electron affinity EA of the clean and ordered 1=1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption Ž . with the help of oxygen p...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2009
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.80.165321